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SUP/SUB75N03-04
Vishay Siliconix
N-Channel 30-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V (BR)DSS (V) r DS(on) ( Ω )
30 0.004
I D (A)
75 a
FEATURES
? TrenchFET ? Power MOSFETs
? 175 °C Rated Maximum Junction
Temperature
Available
RoHS*
COMPLIANT
TO-220AB
D
TO-263
DRAIN connected to TAB
DRAIN connected to TAB
G
D S
G
Top View
G D S
Top View
SUP75N03-04
Ordering Information: SUP75N03-04
SUB75N03-04
S
SUP75N03-04-E3 (Lead (Pb)-free)
SUB75N03-04
SUB75N03-04-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted
N-Channel MOSFET
Parameter
Gate-Source Voltage
Symbol
V GS
Limit
± 20
Unit
V
Continuous Drain Current (T J = 175 °C)
T C = 25 °C
T C = 125 °C
I D
75 a
75 a
Pulsed Drain Current
Pulse Diode Forward Current
Continuous Source Current (Diode Conduction)
Avalanche Current
I DM
I SM
I S
I AR
250
250
75
75
A
T A = 25 °C (TO-263)
Avalanche Energy
Repetitive Avalanche Energy b
Maximum Power Dissipation
L = 0.1 mH
L = 0.05 mH
T C = 25 °C (TO-220AB and TO-263)
d
E AS
E AR
P D
280
140
187 c
3.7
mJ
W
Operating Junction and Storage Temperature Range
Lead Temperature ( 1 / 16 " from case for 10 sec.)
TO-220AB
T J , T stg
T L
- 55 to 175
300
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Junction-to-Ambient
Junction-to-Case
PCB Mount (TO-263) d
Free Air (TO-220AB)
R thJA
R thJC
40
62.5
0.6
°C/W
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70745
S-62484-Rev. F, 04-Dec-06
www.vishay.com
1
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